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JANTXV2N3735 Технические параметры

Microsemi Corporation  JANTXV2N3735 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/395
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Qualification Status Qualified
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Base Voltage (VCBO) 75V
Turn Off Time-Max (toff) 60ns
Turn On Time-Max (ton) 48ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant

JANTXV2N3735 Документы

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