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Microsemi Corporation JANTXV2N6790 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-205AF Metal Can | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 3.5A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 800mW Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Bulk | |
Series | Military, MIL-PRF-19500/555 | |
Published | 1997 | |
JESD-609 Code | e0 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Additional Feature | RADIATION HARDENED | |
Terminal Position | BOTTOM | |
Terminal Form | WIRE |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | unknown | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Reference Standard | MILITARY STANDARD (USA) | |
JESD-30 Code | O-MBCY-W3 | |
Qualification Status | Qualified | |
Configuration | SINGLE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 850m Ω @ 3.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250μA | |
Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V | |
Drain to Source Voltage (Vdss) | 200V | |
Vgs (Max) | ±20V | |
Continuous Drain Current (ID) | 3.5A | |
JEDEC-95 Code | TO-39 | |
Drain-source On Resistance-Max | 0.8Ohm | |
Pulsed Drain Current-Max (IDM) | 14A | |
DS Breakdown Voltage-Min | 200V | |
RoHS Status | Non-RoHS Compliant |