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JANTXV2N6849 Технические параметры

Microsemi Corporation  JANTXV2N6849 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AF Metal Can
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 800mW Ta 25W Tc
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/564
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Свойство продукта Значение свойства
Additional Feature RADIATION HARDENED
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard MILITARY STANDARD (USA)
Qualification Status Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 25A
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status Non-RoHS Compliant

JANTXV2N6849 Документы

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