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MRF559T Технические параметры

Microsemi Corporation  MRF559T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
Collector-Emitter Breakdown Voltage 16V
Current-Collector (Ic) (Max) 150mA
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 2W
Свойство продукта Значение свойства
Power - Max 2W
Transistor Type NPN
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Gain 9.5dB
Voltage - Collector Emitter Breakdown (Max) 16V
Frequency - Transition 870MHz
RoHS Status RoHS Compliant
Просмотр сходства

MRF559T Документы

MRF559T brand manufacturers: Microsemi Corporation, Anli stock, MRF559T reference price.Microsemi Corporation. MRF559T parameters, MRF559T Datasheet PDF and pin diagram description download.You can use the MRF559T Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF559T pin diagram and circuit diagram and usage method of function,MRF559T electronics tutorials.You can download from the Anli.