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MRF5812G Технические параметры

Microsemi Corporation  MRF5812G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
Packaging Bulk
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 1.25W
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Gain 13dB ~ 15.5dB
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

MRF5812G Документы

MRF5812G brand manufacturers: Microsemi Corporation, Anli stock, MRF5812G reference price.Microsemi Corporation. MRF5812G parameters, MRF5812G Datasheet PDF and pin diagram description download.You can use the MRF5812G Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF5812G pin diagram and circuit diagram and usage method of function,MRF5812G electronics tutorials.You can download from the Anli.