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MRF5812GR1 Технические параметры

Microsemi Corporation  MRF5812GR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Breakdown Voltage 15V
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF5812
Pin Count 8
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Gain 13dB ~ 15.5dB
Transition Frequency 5000MHz
Max Breakdown Voltage 15V
Frequency - Transition 5GHz
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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MRF5812GR1 Документы

MRF5812GR1 brand manufacturers: Microsemi Corporation, Anli stock, MRF5812GR1 reference price.Microsemi Corporation. MRF5812GR1 parameters, MRF5812GR1 Datasheet PDF and pin diagram description download.You can use the MRF5812GR1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF5812GR1 pin diagram and circuit diagram and usage method of function,MRF5812GR1 electronics tutorials.You can download from the Anli.