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MRF5812GR2 Технические параметры

Microsemi Corporation  MRF5812GR2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 200mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF5812
Pin Count 8
JESD-30 Code R-PDSO-G8
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Gain 13dB ~ 15.5dB
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Power Dissipation-Max (Abs) 1.25W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
RoHS Status RoHS Compliant
Просмотр сходства

MRF5812GR2 Документы

MRF5812GR2 brand manufacturers: Microsemi Corporation, Anli stock, MRF5812GR2 reference price.Microsemi Corporation. MRF5812GR2 parameters, MRF5812GR2 Datasheet PDF and pin diagram description download.You can use the MRF5812GR2 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF5812GR2 pin diagram and circuit diagram and usage method of function,MRF5812GR2 electronics tutorials.You can download from the Anli.