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MRF5812R1 Технические параметры

Microsemi Corporation  MRF5812R1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 1.25W
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Gain 13dB ~ 15.5dB
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Radiation Hardening No
RoHS Status RoHS Compliant

MRF5812R1 Документы

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