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MRF586G Технические параметры

Microsemi Corporation  MRF586G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3Pins
Supplier Device Package TO-39
Collector-Emitter Breakdown Voltage 17V
Current-Collector (Ic) (Max) 200mA
Number of Elements 2 Elements
Packaging Bulk
Свойство продукта Значение свойства
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Power - Max 1W
Transistor Type NPN
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA 5V
Gain 13.5dB
Voltage - Collector Emitter Breakdown (Max) 17V
Frequency - Transition 3GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

MRF586G Документы

MRF586G brand manufacturers: Microsemi Corporation, Anli stock, MRF586G reference price.Microsemi Corporation. MRF586G parameters, MRF586G Datasheet PDF and pin diagram description download.You can use the MRF586G Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF586G pin diagram and circuit diagram and usage method of function,MRF586G electronics tutorials.You can download from the Anli.