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SD1013-03 Технические параметры
Microsemi Corporation SD1013-03 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | M113 | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 35V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 200°C TJ | |
| Packaging | Bulk | |
| Published | 2001 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | HIGH RELIABILITY | |
| Max Power Dissipation | 13W | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 13W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 35V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA 5V | |
| Gain | 10dB | |
| Transition Frequency | 150MHz | |
| Frequency - Transition | 150MHz | |
| Collector Base Voltage (VCBO) | 65V | |
| Highest Frequency Band | VERY HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 15pF | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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