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SG2001J/883B Технические параметры
Microsemi Corporation SG2001J/883B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 16Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | IN-LINE, R-CDIP-T16 | |
| Number of Elements | 7 Elements | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | not_compliant | |
| JESD-30 Code | R-CDIP-T16 | |
| Qualification Status | Not Qualified | |
| Configuration | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.5 A | |
| DC Current Gain-Min (hFE) | 1000 | |
| Collector-Emitter Voltage-Max | 50 V | |
| VCEsat-Max | 1.6 V |
SG2001J/883B Документы
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