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TAN250A Технические параметры

Microsemi Corporation  TAN250A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 32 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55AW
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
Operating Temperature 200°C TJ
Packaging Bulk
Published 2010
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Max Power Dissipation 575W
Frequency 1.215GHz
Pin Count 2
Power Dissipation 575W
Output Power 250W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Gain 6.2db ~ 7dB
Frequency - Transition 960MHz~1.215GHz
Emitter Base Voltage (VEBO) 4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

TAN250A Документы

TAN250A brand manufacturers: Microsemi Corporation, Anli stock, TAN250A reference price.Microsemi Corporation. TAN250A parameters, TAN250A Datasheet PDF and pin diagram description download.You can use the TAN250A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find TAN250A pin diagram and circuit diagram and usage method of function,TAN250A electronics tutorials.You can download from the Anli.