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MT5C1008ECA-70/XT Технические параметры

Micross  MT5C1008ECA-70/XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка Micross
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Supplier Device Package 8-SOIC
Number of Terminals 32Terminals
Current - Continuous Drain (Id) @ 25℃ 7.6A
Package Description QCCN, LCC32,.45X.55
Package Style CHIP CARRIER
Number of Words Code 128000Words Codes
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Equivalence Code LCC32,.45X.55
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Access Time-Max 45 ns
Operating Temperature-Max 125 °C
Rohs Code No
Manufacturer Part Number MT5C1008ECA-70/XT
Number of Words 131072 wordsWord
Supply Voltage-Nom (Vsup) 5 V
Package Code QCCN
Package Shape RECTANGULAR
Manufacturer Micross Components
Part Life Cycle Code End Of Life
Ihs Manufacturer MICROSS COMPONENTS
Risk Rank 5.02
Part Package Code QFJ
Operating Temperature -55°C ~ 150°C (TJ)
Series --
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code No
Part Status Active
ECCN Code 3A001.A.2.C
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY
HTS Code 8542.32.00.41
Свойство продукта Значение свойства
Subcategory SRAMs
Technology CMOS
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Terminal Pitch 1.27 mm
Reach Compliance Code compliant
Pin Count 32
JESD-30 Code R-CQCC-N32
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5 V
Power Supplies 5 V
Temperature Grade MILITARY
Supply Voltage-Min (Vsup) 4.5 V
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.125 mA
Power - Max 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Organization 128KX8
Output Characteristics 3-STATE
Seated Height-Max 3.048 mm
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Memory Width 8
Drain to Source Voltage (Vdss) 20V
Standby Current-Max 0.01 A
Memory Density 1048576 bit
Parallel/Serial PARALLEL
I/O Type COMMON
Memory IC Type STANDARD SRAM
Standby Voltage-Min 4.5 V
FET Feature Logic Level Gate
Width 11.43 mm
Length 13.97 mm
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