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MT5C1008F-25L/IT Технические параметры

Micross  MT5C1008F-25L/IT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка Micross
Surface Mount YES
Number of Pins 32Pins
Number of Terminals 32Terminals
RoHS Compliant
Package Description FLATPACK-32
Package Style SMALL OUTLINE
Number of Words Code 128000Words Codes
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Equivalence Code FL32,.4
Operating Temperature-Min -40 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Access Time-Max 25 ns
Operating Temperature-Max 85 °C
Rohs Code No
Manufacturer Part Number MT5C1008F-25L/IT
Number of Words 131072 wordsWord
Supply Voltage-Nom (Vsup) 5 V
Package Code SOF
Package Shape RECTANGULAR
Manufacturer Micross Components
Part Life Cycle Code End Of Life
Ihs Manufacturer MICROSS COMPONENTS
Risk Rank 5.02
Part Package Code DFP
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 85 °C
Min Operating Temperature -40 °C
Additional Feature TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY
HTS Code 8542.32.00.41
Свойство продукта Значение свойства
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Terminal Pitch 1.27 mm
Reach Compliance Code compliant
Pin Count 32
JESD-30 Code R-CDSO-F32
Qualification Status Not Qualified
Operating Supply Voltage 5 V
Supply Voltage-Max (Vsup) 5.5 V
Power Supplies 5 V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 4.5 V
Number of Ports 1Port
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.13 mA
Organization 128KX8
Output Characteristics 3-STATE
Seated Height-Max 3.175 mm
Memory Width 8
Address Bus Width 17 b
Density 1 Mb
Standby Current-Max 0.001 A
Memory Density 1048576 bit
Parallel/Serial PARALLEL
I/O Type COMMON
Memory IC Type STANDARD SRAM
Standby Voltage-Min 2 V
Width 10.414 mm
Radiation Hardening No
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