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MWT-LN600 Технические параметры

Microwave Technology Inc.  MWT-LN600 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Package / Case Die
Supplier Device Package Die
Mfr Microwave Technology Inc.
Package Case
Product Status Active
Voltage Rated 5.5 V
Vds - Drain-Source Breakdown Voltage 4.5 V
Transistor Polarity -
Maximum Operating Temperature + 150 C
Minimum Operating Temperature -
Mounting Styles -
Rds On - Drain-Source Resistance -
Свойство продукта Значение свойства
Id - Continuous Drain Current 175 mA
Series -
Current Rating (Amps) -
Technology GaAs
Frequency 26GHz
Operating Frequency 26 GHz
Output Power 20 dBm
Current - Test 100 mA
Transistor Type pHEMT FET
Gain 12dB
Power - Output 20dBm
Noise Figure 0.5dB @ 12GHz
Voltage - Test 3 V
Просмотр сходства
MWT-LN600 brand manufacturers: Microwave Technology Inc., Anli stock, MWT-LN600 reference price.Microwave Technology Inc.. MWT-LN600 parameters, MWT-LN600 Datasheet PDF and pin diagram description download.You can use the MWT-LN600 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find MWT-LN600 pin diagram and circuit diagram and usage method of function,MWT-LN600 electronics tutorials.You can download from the Anli.