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MWT-PH9F Технические параметры
Microwave Technology Inc. MWT-PH9F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | Die | |
| Supplier Device Package | Chip | |
| Mfr | Microwave Technology Inc. | |
| Package | Case | |
| Product Status | Active | |
| Voltage Rated | 7 V | |
| Base Product Number | MWT-PH9 | |
| Vds - Drain-Source Breakdown Voltage | 7.5 V | |
| Transistor Polarity | - | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - | |
| Mounting Styles | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Rds On - Drain-Source Resistance | - | |
| Id - Continuous Drain Current | 180 mA to 220 mA | |
| Series | - | |
| Current Rating (Amps) | 220mA | |
| Technology | GaAs | |
| Frequency | 26GHz | |
| Operating Frequency | 26 GHz | |
| Output Power | 28 dBm | |
| Current - Test | 220 mA | |
| Transistor Type | MESFET | |
| Gain | - | |
| Power - Output | 27dBm | |
| Noise Figure | - | |
| Voltage - Test | 4 V |
Индекс :
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