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- M6M80021P
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M6M80021P Технические параметры
Mitsubishi M6M80021P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Mitsubishi | |
| Surface Mount | NO | |
| Number of Terminals | 8Terminals | |
| Package Description | DIP, DIP8,.3 | |
| Package Style | IN-LINE | |
| Number of Words Code | 128Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | DIP8,.3 | |
| Operating Temperature-Min | -10 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | M6M80021P | |
| Number of Words | 128 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Mitsubishi Electric | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Risk Rank | 8.8 | |
| Part Package Code | DIP | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | 100K ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS | |
| HTS Code | 8542.32.00.51 | |
| Subcategory | EEPROMs | |
| Technology | CMOS |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDIP-T8 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 5 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.018 mA | |
| Organization | 128X16 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 4.5 mm | |
| Memory Width | 16 | |
| Standby Current-Max | 0.018 A | |
| Memory Density | 2048 bit | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | EEPROM | |
| Programming Voltage | 5 V | |
| Endurance | 100000 Write/Erase Cycles | |
| Data Retention Time-Min | 10 | |
| Write Protection | HARDWARE/SOFTWARE | |
| Width | 7.62 mm | |
| Length | 8.9 mm |
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