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MGF0906B Технические параметры
Mitsubishi Electric MGF0906B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Drain Current-Max (ID) | 1.2 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 10 V | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | S BAND | |
| Power Dissipation Ambient-Max | 23 W | |
| Power Gain-Min (Gp) | 10 dB |
MGF0906B Документы
- DatasheetsMITS-S-A0000246373-1.pdf
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