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QM75E2Y-H Технические параметры

Mitsubishi Electric  QM75E2Y-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Surface Mount NO
Number of Terminals 5Terminals
Transistor Element Material SILICON
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-PUFM-X5
Number of Elements 1 Element
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
ECCN Code EAR99
Свойство продукта Значение свойства
Additional Feature BUILT IN BIAS RESISTOR
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Pin Count 5
JESD-30 Code R-PUFM-X5
Qualification Status Not Qualified
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 350 W
Collector Current-Max (IC) 75 A
DC Current Gain-Min (hFE) 75
VCEsat-Max 2 V
Fall Time-Max (tf) 3000 ns
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QM75E2Y-H Документы

  • Datasheets
QM75E2Y-H brand manufacturers: Mitsubishi Electric, Anli stock, QM75E2Y-H reference price.Mitsubishi Electric. QM75E2Y-H parameters, QM75E2Y-H Datasheet PDF and pin diagram description download.You can use the QM75E2Y-H Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find QM75E2Y-H pin diagram and circuit diagram and usage method of function,QM75E2Y-H electronics tutorials.You can download from the Anli.