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RD60HUF1C-501 Технические параметры

Mitsubishi Electric  RD60HUF1C-501 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Date Of Intro 2019-06-19
Drain Current-Max (ID) 20 A
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Свойство продукта Значение свойства
Package Style FLANGE MOUNT
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
JESD-30 Code R-CDFM-F2
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 30 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND

RD60HUF1C-501 Документы

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