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CM1200DB-34N Технические параметры
Mitsubishi Materials U.S.A CM1200DB-34N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | Module | |
| Surface Mount | NO | |
| Number of Terminals | 10Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | N | |
| Collector- Emitter Voltage VCEO Max | 1700 V | |
| Collector-Emitter Saturation Voltage | 2.15 V | |
| Continuous Collector Current at 25 C | 1200 A | |
| Gate-Emitter Leakage Current | 0.5 uA | |
| Pd - Power Dissipation | 6900 W | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 125 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | SMD/SMT | |
| Factory Pack QuantityFactory Pack Quantity | 2 | |
| Manufacturer Part Number | CM1200DB-34N | |
| Package Description | FLANGE MOUNT, R-XUFM-X10 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | UNSPECIFIED | |
| Turn-on Time-Nom (ton) | 1400 ns | |
| Turn-off Time-Nom (toff) | 1500 ns | |
| Operating Temperature-Max | 150 °C | |
| Package Shape | RECTANGULAR |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Risk Rank | 5.68 | |
| Part Package Code | MODULE | |
| Packaging | Bulk | |
| Series | CM1200 | |
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 10 | |
| JESD-30 Code | R-XUFM-X10 | |
| Qualification Status | Not Qualified | |
| Configuration | Dual | |
| Case Connection | ISOLATED | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 6900 W | |
| Collector Current-Max (IC) | 1200 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.8 V | |
| Product | IGBT Silicon Modules | |
| Height (mm) | 38 mm |
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