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Motorola Semiconductor Products VN2222LL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Mounting Hole | 12 mm | |
| Gross Weight | 17.70 | |
| Transport Packaging size/quantity | 50*30*30/500 | |
| Switching Scheme | ON- (ON) SPDT 3P | |
| Design Features | green button Ф13 mm | |
| Nominal Voltage | AC: 250/ 125 V | |
| Nominal Current | 5 A | |
| Dielectric Strength | 1000 (50 Hz, 1 min) V | |
| Number of Switching Cycles (electrical) | 100000 min | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Drain Current-Max (ID) | 0.15 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Depth | 41 (total) mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 25 (electrical) cycles/min max | |
| Contact Resistance | 30 mOhm max | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation Resistance | 100 (at Uinsp.dc = 500 V) MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Switch Type | Micro switch series KW3 with button | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | -25...+85 °C | |
| JEDEC-95 Code | TO-226AA | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Feedback Cap-Max (Crss) | 5 pF | |
| Height | 44 mm | |
| Width | 13 mm |