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NTR2101PT1G Технические параметры

Murata Electronics  NTR2101PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.95
Category Small Signal
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 8
Maximum Gate Source Voltage (V) ±8
Maximum Continuous Drain Current (A) 3.7
Typical Gate Charge @ Vgs (nC) [email protected]
Свойство продукта Значение свойства
Typical Input Capacitance @ Vds (pF) 1173@4V
Maximum Power Dissipation (mW) 960
Typical Fall Time (ns) 31
Typical Rise Time (ns) 15.75
Typical Turn-Off Delay Time (ns) 38
Typical Turn-On Delay Time (ns) 7.4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Part Status Active
Configuration Single
Channel Type P
Просмотр сходства
NTR2101PT1G brand manufacturers: Murata Electronics, Anli stock, NTR2101PT1G reference price.Murata Electronics. NTR2101PT1G parameters, NTR2101PT1G Datasheet PDF and pin diagram description download.You can use the NTR2101PT1G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTR2101PT1G pin diagram and circuit diagram and usage method of function,NTR2101PT1G electronics tutorials.You can download from the Anli.