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CSD13383F4 Технические параметры
National Semiconductor CSD13383F4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | National Semiconductor | |
| Factory Lead Time | 6 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Yes | |
| Mounting | PCB | |
| Package Style | GRID ARRAY | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | CSD13383F4 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Texas | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Samacsys Description | 12V, N ch NexFET MOSFETu2122, single LGA 1.0 x 0.6mm, 44mOhm | |
| Ihs Manufacturer | Texas INC | |
| Risk Rank | 1.64 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drain Current-Max (ID) | 2.9 A | |
| Series | n/a | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Pitch | 5 mm | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-XBGA-N3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Note | n/a | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| DS Breakdown Voltage-Min | 12 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 61 pF |
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