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DS2004CM Технические параметры
National Semiconductor DS2004CM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | National Semiconductor | |
| Surface Mount | YES | |
| Number of Terminals | 16Terminals | |
| Transistor Element Material | SILICON | |
| Voltage, Rating | 150 V | |
| Package | Bulk | |
| Mfr | National Semiconductor | |
| Product Status | Active | |
| Package Description | M16A, 16 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | DS2004CM | |
| Turn-on Time-Max (ton) | 1000 ns | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 7 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Turn-off Time-Max (toff) | 1000 ns | |
| Risk Rank | 5.57 | |
| Series | * |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | 1 % | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Temperature Coefficient | 100 ppm/°C | |
| Resistance | 29.4 Ω | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Power Rating | 250 mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 16 | |
| JESD-30 Code | R-PDSO-G16 | |
| Qualification Status | COMMERCIAL | |
| Configuration | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Height | 650 µm |
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