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NE68133T1BA Технические параметры
NEC NE68133T1BA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | NEC | |
| Mount | Surface Mount | |
| Number of Pins | 3Pins | |
| Material | Nylon 6/6 | |
| MaxPanel Thickness (mm) | 4.0 | |
| Head Dia (mm) | 10,7 | |
| Locking Step | PRYOUT | |
| Overall Height (mm) | 8,3 | |
| Mounting Hole Dia. (in) | 0.250 | |
| Mounting Hole Dia. (mm) | 6,4 | |
| Alternate PN | POP 250 | |
| Overall Height (in) | 0.33 | |
| Note-1 | POP in closures for pipe and tubing ends | |
| UL | Recognized File E51579 | |
| CSA | File 8919 | |
| MaxPanel Thickness (in) | 0.156 | |
| Collector-Emitter Breakdown Voltage | 10 V | |
| Number of Elements | 1 Element | |
| Voltage Rating (DC) | 10 V | |
| RoHS | Compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Tape and Reel | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 200 mW | |
| Current Rating | 65 mA | |
| Frequency | 9 GHz | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 200 mW | |
| Collector Emitter Voltage (VCEO) | 10 V | |
| Max Collector Current | 65 mA | |
| Temperature Range | -40C to +105C | |
| Gain | 13 dB | |
| Transition Frequency | 9 GHz | |
| Max Breakdown Voltage | 10 V | |
| Collector Base Voltage (VCBO) | 20 V | |
| Emitter Base Voltage (VEBO) | 1.5 V | |
| Continuous Collector Current | 65 mA | |
| Flammability Rating | 94V-2 | |
| Lead Free | Lead Free |
Индекс :
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