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NE85619-T1-A Технические параметры
NEC NE85619-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | NEC | |
| Mount | Surface Mount | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 12 V | |
| Number of Elements | 1 Element | |
| Voltage Rating (DC) | 12 V | |
| RoHS | Compliant | |
| Packaging | Tape and Reel | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Max Power Dissipation | 100 mW | |
| Current Rating | 100 mA | |
| Frequency | 4.5 GHz | |
| Polarity | NPN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 100 mW | |
| Gain Bandwidth Product | 4.5 GHz | |
| Collector Emitter Voltage (VCEO) | 12 V | |
| Max Collector Current | 100 mA | |
| Gain | 9 dB | |
| Transition Frequency | 4.5 GHz | |
| Max Breakdown Voltage | 12 V | |
| Collector Base Voltage (VCBO) | 20 V | |
| Emitter Base Voltage (VEBO) | 3 V | |
| Continuous Collector Current | 100 mA | |
| Width | 800 µm | |
| Height | 750 µm | |
| Length | 1.6 mm | |
| Lead Free | Lead Free |
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