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NE85633-T1B-A Технические параметры

NEC  NE85633-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка NEC
Mount Surface Mount
Weight 1.437803 g
Collector-Emitter Breakdown Voltage 12 V
Voltage Rating (DC) 12 V
RoHS Compliant
Packaging Cut Tape
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Max Power Dissipation 200 mW
Current Rating 100 mA
Frequency 1 GHz
Polarity NPN
Свойство продукта Значение свойства
Element Configuration Single
Gain Bandwidth Product 7 GHz
Collector Emitter Voltage (VCEO) 12 V
Max Collector Current 100 mA
Gain 11.5 dB
Transition Frequency 7 GHz
Max Breakdown Voltage 12 V
Emitter Base Voltage (VEBO) 3 V
Continuous Collector Current 100 mA
Width 1.5 mm
Height 1.1 mm
Length 2.9 mm
Lead Free Lead Free
Просмотр сходства
NE85633-T1B-A brand manufacturers: NEC, Anli stock, NE85633-T1B-A reference price.NEC. NE85633-T1B-A parameters, NE85633-T1B-A Datasheet PDF and pin diagram description download.You can use the NE85633-T1B-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85633-T1B-A pin diagram and circuit diagram and usage method of function,NE85633-T1B-A electronics tutorials.You can download from the Anli.