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BAV70M Технические параметры

Nexperia  BAV70M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка Nexperia
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 3Terminals
Exterior Housing Material 2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Package Description SC-101, SOT-883, DFN1006-3
Date Of Intro 1997-10-21
Forward Voltage-Max (VF) 1.25 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish TIN
Additional Feature LOW LEAKAGE CURRENT
Свойство продукта Значение свойства
HTS Code 8541.10.00.70
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard IEC-60134
JESD-30 Code R-PBCC-N3
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Type RECTIFIER DIODE
Output Current-Max 0.15 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 100 V
Non-rep Pk Forward Current-Max 4 A
Reverse Current-Max 0.5 μA
Reverse Recovery Time-Max 0.004 μs
Reverse Test Voltage 80 V
Output Range 0.25 W
2nd Connector Number of Positions Loaded GENERAL PURPOSE
Saturation Current 1

BAV70M Документы

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