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BC807W-QF Технические параметры
Nexperia BC807W-QF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Nexperia | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Supplier Device Package | SOT-323 | |
| Transistor Polarity | PNP | |
| Package | Tape & Reel (TR) | |
| Current-Collector (Ic) (Max) | 500 mA | |
| Mfr | Nexperia USA Inc. | |
| Product Status | Active | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 290 mW | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 100 at - 100 mA, - 1 V | |
| Collector-Emitter Saturation Voltage | 700 mV | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | 80 MHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum DC Collector Current | 1 A | |
| Collector- Emitter Voltage VCEO Max | 45 V | |
| Operating Temperature | 150°C (TJ) | |
| Series | Automotive, AEC-Q101 | |
| Technology | Si | |
| Configuration | Single | |
| Power Dissipation | 290 | |
| Power - Max | 200 mW | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Transition Frequency | 80 | |
| Frequency - Transition | 80MHz | |
| Collector Base Voltage (VCBO) | 50 V | |
| Continuous Collector Current | 500 |
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