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BUK7S1R2-40HJ Технические параметры

Nexperia  BUK7S1R2-40HJ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Nexperia
Package / Case LFPAK-88-4
Mounting Type Surface Mount
Supplier Device Package LFPAK88 (SOT1235)
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Continuous Drain Current Id 300A
Vds - Drain-Source Breakdown Voltage 43 V
Typical Turn-On Delay Time 19 ns
Vgs th - Gate-Source Threshold Voltage 4.3 V
Pd - Power Dissipation 294 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.012221 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases 934661103118
Manufacturer Nexperia
Brand Nexperia
Qg - Gate Charge 80 nC
Rds On - Drain-Source Resistance 2.6 mOhms
RoHS Details
Typical Turn-Off Delay Time 50 ns
Id - Continuous Drain Current 300 A
Свойство продукта Значение свойства
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number BUK7S1
Current - Continuous Drain (Id) @ 25℃ 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Nexperia USA Inc.
Power Dissipation (Max) 294W (Ta)
Product Status Active
Packaging MouseReel
Operating Temperature -55°C ~ 175°C (TJ)
Series Automotive, AEC-Q101
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 294W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Rise Time 16 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) +20V, -10V
Product Type MOSFET
Transistor Type 1 N-Channel
Channel Type N Channel
FET Feature -
Product Category MOSFET
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