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BUK7Y1R7-40H Технические параметры
Nexperia BUK7Y1R7-40H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | Nexperia | |
| Contact plating | gold-plated | |
| Surface Mount | YES | |
| Number of pins | 22pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Type of connector | pin strips | |
| Connector | socket | |
| Kind of connector | female | |
| Spatial orientation | straight | |
| Contacts pitch | 2.54mm | |
| Electrical mounting | THT | |
| Connector pinout layout | 2x11 | |
| Row pitch | 2.54mm | |
| Gross weight | 1.2 g | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SOT-669, SO-8, 4 PIN | |
| Drain Current-Max (ID) | 120 A | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Operating temperature | -40...163°C | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Current rating | 3A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PSSO-G4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | MO-235 | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| Pulsed Drain Current-Max (IDM) | 600 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 158 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 294 W | |
| Rated voltage | 150V | |
| Feedback Cap-Max (Crss) | 393 pF | |
| Profile | beryllium copper | |
| Saturation Current | 1 | |
| Plating thickness | 0.75µm | |
| Flammability rating | UL94V-0 |
BUK7Y1R7-40H Документы
- Datasheets743b0d5519a4dec0f2813167ce5d4cfe.pdf
Индекс :
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