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BZV55-B10 Технические параметры

Nexperia  BZV55-B10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Zener - Single
Марка Nexperia
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
Exterior Housing Material 1
Type of module IGBT
Semiconductor structure transistor/transistor
Max. off-state voltage 1.7kV
Collector current 150A
Case MiniSKiiP® 2
Electrical mounting Press-Fit
Gate-emitter voltage ±20V
Pulsed collector current 450A
Mechanical mounting screw
Gross weight 55 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Date Of Intro 2017-02-17
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Свойство продукта Значение свойства
Package Style LONG FORM
Reference Voltage-Nom 10 V
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish TIN
HTS Code 8541.10.00.50
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard IEC-60134
JESD-30 Code O-LELF-R2
Polarity UNIDIRECTIONAL
Configuration SINGLE
Diode Type ZENER DIODE
Case Connection ISOLATED
Topology IGBT half-bridge,
Voltage Tol-Max 2%
Working Test Current 5 mA
Output Range 0.4 W
2nd Connector Number of Positions Loaded for UPS,
Saturation Current 1

BZV55-B10 Документы

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