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PBRP113ET-QR Технические параметры

Nexperia  PBRP113ET-QR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка Nexperia
Package / Case SOT-23-3
Mounting Type Surface Mount
Supplier Device Package TO-236AB
RoHS Details
Transistor Polarity PNP
Typical Input Resistor 1 kOhms
Typical Resistor Ratio 1
Mounting Styles SMD/SMT
DC Collector/Base Gain hfe Min 40
Collector- Emitter Voltage VCEO Max 40 V
Pd - Power Dissipation 370 mW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Emitter- Base Voltage VEBO 10 V
Maximum DC Collector Current 600 mA
Qualification AEC-Q101
Factory Pack QuantityFactory Pack Quantity 3000
Свойство продукта Значение свойства
Part # Aliases 934662855215
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 600 mA
Base Product Number PBRP113
Mfr Nexperia USA Inc.
Product Status Active
Packaging MouseReel
Series Automotive, AEC-Q101
Power Dissipation 250
Power - Max 250 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 600mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 6mA, 600mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Resistor - Base (R1) 1 kOhms
Continuous Collector Current 600
Resistor - Emitter Base (R2) 1 kOhms
Просмотр сходства
PBRP113ET-QR brand manufacturers: Nexperia, Anli stock, PBRP113ET-QR reference price.Nexperia. PBRP113ET-QR parameters, PBRP113ET-QR Datasheet PDF and pin diagram description download.You can use the PBRP113ET-QR Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PBRP113ET-QR pin diagram and circuit diagram and usage method of function,PBRP113ET-QR electronics tutorials.You can download from the Anli.