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PBSS9110T-QR Технические параметры

Nexperia  PBSS9110T-QR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Nexperia
Package / Case SOT-23-3
Mounting Type Surface Mount
Supplier Device Package TO-236AB
RoHS Details
Mounting Styles SMD/SMT
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 100 V
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 3 A
Pd - Power Dissipation 480 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 150 at - 500 mA, - 50 V
DC Current Gain hFE Max 450 at - 500 mA, - 50 V
Factory Pack QuantityFactory Pack Quantity 3000
Свойство продукта Значение свойства
Part # Aliases 934663814215
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 1 A
Mfr Nexperia USA Inc.
Product Status Active
Packaging Cut Tape
Operating Temperature 150°C (TJ)
Series Automotive, AEC-Q101
Configuration Single
Power - Max 300 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 100 V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 120 V
Continuous Collector Current 1 A
Просмотр сходства
PBSS9110T-QR brand manufacturers: Nexperia, Anli stock, PBSS9110T-QR reference price.Nexperia. PBSS9110T-QR parameters, PBSS9110T-QR Datasheet PDF and pin diagram description download.You can use the PBSS9110T-QR Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PBSS9110T-QR pin diagram and circuit diagram and usage method of function,PBSS9110T-QR electronics tutorials.You can download from the Anli.