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PMDXB290UNEZ Технические параметры

Nexperia  PMDXB290UNEZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Nexperia
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number PMDXB290
Current - Continuous Drain (Id) @ 25℃ 930mA (Ta), 3.5A (Tc)
Mfr Nexperia USA Inc.
Product Status Active
Vds - Drain-Source Breakdown Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Pd - Power Dissipation 370 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 8 V, + 8 V
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 600 pC
Rds On - Drain-Source Resistance 320 mOhms
Id - Continuous Drain Current 930 mA
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Number of Channels 2 ChannelChannel
Power - Max 280mW (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs 320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 43.6pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
FET Feature Standard
Просмотр сходства
PMDXB290UNEZ brand manufacturers: Nexperia, Anli stock, PMDXB290UNEZ reference price.Nexperia. PMDXB290UNEZ parameters, PMDXB290UNEZ Datasheet PDF and pin diagram description download.You can use the PMDXB290UNEZ Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find PMDXB290UNEZ pin diagram and circuit diagram and usage method of function,PMDXB290UNEZ electronics tutorials.You can download from the Anli.