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1PS66SB17,115 Технические параметры
Nexperia USA Inc. 1PS66SB17,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 3 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | FLAT | |
| Base Part Number | 1PS66 | |
| Pin Count | 6 | |
| Configuration | SEPARATE, 3 ELEMENTS | |
| Max Current Rating | 30mA | |
| Diode Type | Schottky - 3 Independent | |
| Forward Current | 30mA | |
| Max Reverse Leakage Current | 250nA | |
| Forward Voltage | 600mV | |
| Average Rectified Current | 30mA | |
| Peak Reverse Current | 250nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 4V | |
| Capacitance @ Vr, F | 0.65pF @ 0.5V 1MHz | |
| Diode Capacitance-Max | 1pF | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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