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2N7002BKV,115 Технические параметры

Nexperia USA Inc.  2N7002BKV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 12 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 1.6Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 350mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 525mW
Turn On Delay Time 5 ns
Power - Max 350mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Rise Time 6ns
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 340mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.34A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2N7002BKV,115 Документы

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