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Nexperia USA Inc. 2N7002BKW,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | SC-70, SOT-323 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 310mA Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 275mW Ta | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | Automotive, AEC-Q101, TrenchMOS™ | |
Published | 2010 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Finish | Tin (Sn) |
Свойство продукта | Значение свойства | |
---|---|---|
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Pin Count | 3 | |
JESD-30 Code | R-PDSO-G3 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V | |
Drain to Source Voltage (Vdss) | 60V | |
Vgs (Max) | ±20V | |
Drain Current-Max (Abs) (ID) | 0.31A | |
Pulsed Drain Current-Max (IDM) | 1.2A | |
DS Breakdown Voltage-Min | 60V | |
RoHS Status | ROHS3 Compliant |