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Nexperia USA Inc. 2N7002PV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 10 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 330mW | |
| Terminal Form | FLAT | |
| Pin Count | 6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 390mW | |
| Turn On Delay Time | 3 ns | |
| Power - Max | 330mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V | |
| Rise Time | 4ns | |
| Fall Time (Typ) | 5 ns | |
| Continuous Drain Current (ID) | 350mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 60V | |
| Drain Current-Max (Abs) (ID) | 0.35A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |