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BAS16VY,165 Технические параметры
Nexperia USA Inc. BAS16VY,165 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 3 Elements | |
| Power Dissipation (Max) | 0.25W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAS16VY | |
| Pin Count | 6 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 500nA @ 80V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 500nA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Surge Current | 4A | |
| Output Current-Max | 0.2A | |
| Current - Average Rectified (Io) | 200mA DC | |
| Forward Voltage | 1.25V | |
| Max Reverse Voltage (DC) | 100V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 4 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 100V | |
| Peak Non-Repetitive Surge Current | 4A | |
| Diode Configuration | 3 Independent | |
| Recovery Time | 4 ns | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
BAS16VY,165 Документы
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