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Nexperia USA Inc. BAS21,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 0.25W | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BAS21 | |
| Pin Count | 3 | |
| Configuration | SINGLE | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 100nA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA | |
| Forward Current | 200mA | |
| Operating Temperature - Junction | 150°C Max | |
| Output Current-Max | 0.2A | |
| Current - Average Rectified (Io) | 200mA DC | |
| Reverse Recovery Time | 50ns | |
| Peak Reverse Current | 100nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 250V | |
| Capacitance @ Vr, F | 5pF @ 0V 1MHz | |
| Reverse Voltage | 200V | |
| Max Forward Surge Current (Ifsm) | 9A | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 1.1mm | |
| RoHS Status | ROHS3 Compliant |