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BAV70S,135 Технические параметры

Nexperia USA Inc.  BAV70S,135 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Diode Element Material SILICON
Number of Elements 4 Elements
Power Dissipation (Max) 0.35W
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Capacitance 1.5pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BAV70S
Pin Count 6
Свойство продукта Значение свойства
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 250mA
Max Reverse Leakage Current 500nA
Operating Temperature - Junction 150°C Max
Max Surge Current 4A
Output Current-Max 0.25A
Current - Average Rectified (Io) 250mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 100V
Average Rectified Current 250mA
Reverse Recovery Time 4 ns
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 4A
Reverse Voltage 100V
Diode Configuration 2 Pair Common Cathode
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 4 ns
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

BAV70S,135 Документы

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