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BC56-10PA-QX Технические параметры

Nexperia USA Inc.  BC56-10PA-QX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2)
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 1 A
Qualification -
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 1.35 W
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 63 at 150 mA, 2 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 100 MHz
Part # Aliases 934664529115
Manufacturer Nexperia
Brand Nexperia
Свойство продукта Значение свойства
DC Current Gain hFE Max 160 at 150 mA, 2 V
RoHS Details
Collector- Emitter Voltage VCEO Max 80 V
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Packaging MouseReel
Subcategory Transistors
Technology Si
Configuration Single
Power Dissipation 1.65W
Power - Max 420 mW
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Transition Frequency 180MHz
Frequency - Transition 180MHz
Collector Base Voltage (VCBO) 100 V
Continuous Collector Current 1A
Product Category Bipolar Transistors - BJT
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