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BC69PA,115 Технические параметры

Nexperia USA Inc.  BC69PA,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 420mW
Terminal Position DUAL
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Configuration SINGLE
Power Dissipation 1.65W
Case Connection COLLECTOR
Power - Max 420mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Transition Frequency 140MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant

BC69PA,115 Документы

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