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BC817DSF Технические параметры

Nexperia USA Inc.  BC817DSF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 370mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC817DS
Pin Count 6
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant

BC817DSF Документы

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