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BC856BS,115 Технические параметры

Nexperia USA Inc.  BC856BS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 2 Elements
hFEMin 290
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Pin Count 6
JESD-30 Code R-PDSO-G6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Forward Current 70mA
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Forward Voltage 410mV
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
Max Repetitive Reverse Voltage (Vrrm) 70V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Max Forward Surge Current (Ifsm) 100mA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC856BS,115 Документы

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