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BC857AW,115 Технические параметры
Nexperia USA Inc. BC857AW,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 45V | |
| Number of Elements | 1 Element | |
| hFEMin | 125 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BC857 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 100MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 45V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 15nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 45V | |
| Collector Base Voltage (VCBO) | 50V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Collector-Base Capacitance-Max | 5pF | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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