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BC857BV,115 Технические параметры

Nexperia USA Inc.  BC857BV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number BC857BV
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 200mW
Forward Current 15mA
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Forward Voltage 1V
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
Max Repetitive Reverse Voltage (Vrrm) 70V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Max Forward Surge Current (Ifsm) 100mA
Height 600μm
Length 1.7mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC857BV,115 Документы

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