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BCM847BV,115 Технические параметры

Nexperia USA Inc.  BCM847BV,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Supplier Device Package SOT-666
Weight 4.535924g
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage 400mV
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 300mW
Frequency 250MHz
Свойство продукта Значение свойства
Base Part Number BCM847
Polarity NPN
Element Configuration Dual
Power Dissipation 300mW
Power - Max 300mW
Gain Bandwidth Product 250MHz
Transistor Type 2 NPN (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Max Frequency 250MHz
Max Breakdown Voltage 45V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 600μm
Length 1.7mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BCM847BV,115 Документы

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